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July 2003
AO4609 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18m (VGS=10V) < 130m (VGS = 10V) < 28m (VGS=4.5V) < 180m (VGS = 4.5V) < 260m (VGS = 2.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 12 -3 -2.4 -6 2 1.28 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
8.5 6.6 40 2 1.28 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 48 74 35 56 81 40
Max 62.5 110 40
Units C/W C/W C/W
62.5 C/W 110 C/W 48 C/W
AO4609
N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.5A TJ=125C 1 30 15.5 22.3 23 23 0.75 18 27 28 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 4.2 5.2 4.4 17.3 3.3 16.7 6.7 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=15V, RL=1.8, RGEN=3
IF=8.5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4609
P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3A Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-3A -0.6 -10 102 154 128 3 187 4.5 -0.85 130 200 180 260 -1 -2 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
409 55 42 12 4.4 0.8 1.32 5.3 4.4 31.5 8 15.8 8
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-15V, ID=-3A
VGS=-10V, VDS=-15V, RL=5, RGEN=3
IF=-3A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 28 Normalized On-Resistance 26 24 RDS(ON) (m) 22 20 18 16 14 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=8.5A IS (A) 1.0E-01 125C 1.0E-02 25C 1.0E-03 20 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.6 VGS=10V 1.4 ID=8.5A VGS=4.5V 1.2 4V 10V 4.5V 3.5V 1.20E+01 ID(A) 125C 8.00E+00 VGS=3V 4.00E+00 0.00E+00 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 2.00E+01 1.60E+01 VDS=5V
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
30
125C
10
Alpha & Omega Semiconductor, Ltd.
AO4609
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss
100.0
RDS(ON) limited 1ms 10ms 0.1s 100s 10s Power (W)
50 40 30 20 10 0 0.001
TJ(Max)=150C TA=25C
ID (Amps)
10.0
1.0 TJ(Max)=150C TA=25C 0.1 0.1 1
1s 10s DC 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
Toff 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4609
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 -5V -10V 15 -ID (A) -4.5V -4V VGS=-3.5V 10 -3V -2.5V 2 -2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 Normalized On-Resistance VGS=-2.5V 200 RDS(ON) (m) 1.6 VGS=-10V 1.4 VGS=-4.5V VGS=-2.5V 1.2 ID=-2A 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 6 4 125C 8 10 VDS=-5V 25C
5
150
VGS=-4.5V
100 VGS=-10V 50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-2A RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
125C
Alpha & Omega Semiconductor, Ltd.
AO4609
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=-15V ID=-3A Capacitance (pF) 500 400 300 200 Coss 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss Ciss
100.0 TJ(Max)=150C TA=25C RDS(ON) limited 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) -ID (Amps) 10.0 10s 100s 1ms 10ms 0.1s
20
TJ(Max)=150C TA=25C
15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
DIMENSIONS IN MILLIMETERS SYMBOLS
DIMENSIONS IN INCHES
A A1 A2 b c D E1 e E h L aaa
MIN 1.45 0.00 --- 0.33 0.19 4.80 3.80 5.80 0.25 0.40 --- 0
NOM 1.50 --- 1.45 --- --- --- --- 1.27 BSC --- --- --- --- ---
MAX 1.55 0.10 --- 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8
MIN 0.057 0.000 --- 0.013 0.007 0.189 0.150 0.228 0.010 0.016 --- 0
NOM 0.059 --- 0.057 --- --- --- --- 0.050 BSC --- --- --- --- ---
MAX 0.061 0.004 --- 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
LOGO 4 6 0 9 FAYWLC
NOTE: LOGO 4609 F A Y W LC
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
SO-8 PART NO. CODE
UNIT: mm
PART NO. AO4609
CODE 4609
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation
Document No.
PD-00064
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
Version
Title
rev C
AO4609 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
Green product
NOTE: LOGO 4609 F&A Y W LT
- AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
PART NO. DESCRIPTION AO4609 AO4609L Standard product Green product
CODE 4609 4609
8
SEATING PLANE
GAUGE PLANE
NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
1
SYMBOLS DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
RECOMMENDED LAND PATTERN
A A1 A2 b c D E1 e E h L
MIN 1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40 0
NOM 1.65 --- 1.50 --- --- 4.90 3.90 1.27 BSC 6.00 --- --- ---
MAX 1.75 0.25 1.65 0.51 0.25 5.00 4.00 6.20 0.50 1.27 8
MIN 0.053 0.004 0.049 0.012 0.007 0.189 0.150
0.228 0.010 0.016 0
NOM 0.065 --- 0.059 --- --- 0.193 0.154 0.050 BSC 0.236 --- --- ---
MAX 0.069 0.010 0.065 0.020 0.010 0.197 0.157
0.244 0.020 0.050 8
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
SO-8 Carrier Tape
SO-8 Tape and Reel Data
SO-8 Reel
SO-8 Tape
Leader / Trailer & Orientation

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